This article is cited in 3 papers

Semiconductor physics

Some features of photocurrent generation in single- and multibarrier photodiode structures

A. V. Karimov, D. M. Yodgorova

Physical-Technical Institute, Uzbekistan Academy of Sciences

Abstract: In contrast to single barrier photodiode structures, multibarrier ones exhibit the effect of increasing the number of photogenerated carriers in the entire range of operating voltages, whereas the photocurrent generation in avalanche and injection photodiodes is characterized by the threshold behavior and is associated with changes in the dark carrier density. The suggested interpretation of the effect of internal photoelectric amplification will make it possible to estimate experimental current or voltage gains and detect photoelectric amplification in photodiode structures irrespective of their type.

Received: 14.05.2009
Accepted: 15.09.2009

 English version: Semiconductors, 2010, 44:5, 647–652

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