This article is cited in 5 papers

Amorphous, glassy, porous, organic, microcrystalline semiconductors, semiconductor composites

Optical properties of iron-passivated nanoporous silicon

O. Yu. Shevchenko, D. N. Goryachev, L. V. Belyakov, O. M. Sreseli

Ioffe Institute, St. Petersburg

Abstract: The intensity of photoluminescence from nanoporous silicon layers produced by electrochemical etching in an aqueous-alcoholic HF solution in the presence of iron ions increases and properties of these layers are stabilized. The optimal FeCl$_3$ concentration in the etching solution has been found. The interaction of iron ions with the silicon surface and the nature and possible products of reactions involving oxygen and hydrogen have been studied.

Received: 12.10.2009
Accepted: 19.10.2009

 English version: Semiconductors, 2010, 44:5, 642–646

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