This article is cited in 24 papers

Low-dimensional systems

Persistent photoconductivity in InAs/AlSb heterostructures with double quantum wells

V. I. Gavrilenko, A. V. Ikonnikov, S. S. Krishtopenko, A. A. Lastovkin, K. V. Marem'yanin, Yu. G. Sadof'ev, K. E. Spirin

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: Effects of persistent photoconductivity in InAs/AlSb heterostructures with the cap GaSb layer and two-dimensional electron gas in the InAs double quantum wells at $T$ = 4.2 K are studied. From Fourier analysis of the Shubnikov–de Haas oscillations, electron concentrations in each quantum well are determined at various wavelengths of illumination and pronounced asymmetry of the structure caused by the built-in electric field is demonstrated explicitly. The self-consistent calculations of the energy profile of the double quantum well are performed and the concentrations of ionized donors on both sides of the well are determined, which provided concretization of the previously suggested mechanism of bipolar persistent photoconductivity in such structures.

Received: 20.08.2009
Accepted: 30.09.2009

 English version: Semiconductors, 2010, 44:5, 616–622

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