I. G. Atabaev, N. A. Matchanov, M. U. Khazhiev, V. Pak, T. M. Saliev, “Effect of different chemical treatments of surface on the height of Al–$p$-SiGe and Au–$n$-SiGe barriers”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 5,Pages 631

This article is cited in 2 papers

Semiconductor structures, interfaces and surfaces

Effect of different chemical treatments of surface on the height of Al–$p$-SiGe and Au–$n$-SiGe barriers

I. G. Atabaev, N. A. Matchanov, M. U. Khazhiev, V. Pak, T. M. Saliev

Physical-Technical Institute, Uzbekistan Academy of Sciences

Abstract: The effect of different chemical treatments on the properties of Au–$n$-SiGe и Al–$p$-SiGe Schottky barriers has been investigated. Etching under different conditions was used to prepare surfaces with different densities of surface states $(D_{\mathrm{ss}})$. It is shown that the barrier height in the structures under study correlates with the $D_{\mathrm{ss}}$ value and germanium content in the Si$_{1-x}$Ge$_x$ alloy.

Received: 04.08.2009
Accepted: 29.09.2009