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Fizika i Tekhnika Poluprovodnikov, 2010 Volume 44, Issue 5, Pages 628–630 (Mi phts8816)

This article is cited in 5 papers

Semiconductor structures, interfaces and surfaces

Adsorption of alkali metals and their effect on electronic properties of grain boundaries in bulk of polycrystalline silicon

L. O. Olimov

Andijan State University

Abstract: The adsorption of alkali metals and their effect on the electronic properties of grain boundaries in bulk of polycrystalline silicon has been studied experimentally. The results obtained show that the potential barrier grows during diffusion and adsorption of alkali metal atoms along grain boundaries.

Received: 18.06.2009
Accepted: 15.09.2009


 English version:
Semiconductors, 2010, 44:5, 602–604

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