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Fizika i Tekhnika Poluprovodnikov, 2010 Volume 44, Issue 5, Pages 594–599 (Mi phts8811)

This article is cited in 21 papers

Electronic and optical properties of semiconductors

Specific features of the luminescence and conductivity of zinc selenide on exposure to X-ray and optical excitation

V. Ya. Degoda, A. A. Sofienko

National Taras Shevchenko University of Kyiv, Faculty of Physics

Abstract: The set of experimental data on the X-ray-excited luminescence and X-ray induced conductivity of ZnSe are compared to the data on the photoluminescence and photoconductivity. It is experimentally established that the current-voltage characteristics and the kinetics of phosphorescence and current relaxation depend on the type of excitation. It is found that the external electric field influences the intensity and shape of bands in the luminescence spectra. It is shown that the character of excitation defines the kinetics of recombination, charge carrier trapping, and conductivity in wide-gap semiconductors.


 English version:
Semiconductors, 2010, 44:5, 568–574

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