I. S. Virt, T. P. Shkumbatyuk, I. V. Kurilo, I. A. Rudyj, I. E. Lopatynskyi, L. F. Linnik, V. V. Tetyorkin, A. G. Fedorov, “Deposition of thin Bi$_2$Te$_3$ and Sb$_2$Te$_3$ films by pulsed laser ablation”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 4,Pages 564

This article is cited in 14 papers

Manufacturing, processing, testing of materials and structures

Deposition of thin Bi$_2$Te$_3$ and Sb$_2$Te$_3$ films by pulsed laser ablation

I. S. Virt^ab, T. P. Shkumbatyuk^b, I. V. Kurilo^c, I. A. Rudyj^c, I. E. Lopatynskyi^c, L. F. Linnik^d, V. V. Tetyorkin^d, A. G. Fedorov^e

^a Rzeszów University
^b Drohobych Ivan Franko State Pedagogical University
^c Lviv Polytechnic National University
^d Institute of Semiconductor Physics NAS, Kiev
^e Institute for Single Crystals, National Academy of Sciences of Ukraine, Kharkov

Abstract: Bi$_2$Te$_3$ и Sb$_2$Te$_3$ films were obtained by pulsed laser ablation. The films were deposited in vacuum (1 $\times$ 10$^{-5}$ Torr) on single crystal substrates of Al$_2$O$_3$ (0001), BaF$_2$ (111), and fresh cleavages of KCl or NaCl (001) heated to 453–523 K. The films were 10–1500 nm thick. The structures of the bulk material of targets and films were studied by X-ray diffractometry and transmission high-energy electron diffraction, respectively. Electrical properties of the films were measured in the temperature range of 77–300 K. It is shown that the films possess semiconductor properties. Several activation portions are observed in the temperature dependences of resistivity; the energies of activation portions depend on the film thickness and crystallite size.