This article is cited in 8 papers

Manufacturing, processing, testing of materials and structures

X-ray and infrared spectroscopy of layers produced by cosputtering of spatially separated SiO$_2$ and Si sources

S. N. Shamin^a, V. R. Galakhov^a, V. I. Aksenova^b, A. N. Karpov^c, N. L. Shwartz^c, Z. Sh. Yanovitskaya^c, V. A. Volodin^c, I. V. Antonova^c, T. B. Ezhevskaya^c, J. Jedrzejewski^d, E. Savir^d, I. Balberg<sup>d

a</sup> Institute of Metal Physics, Ural Branch of the Russian Academy of Sciences, Ekaterinburg
^b Ural State Law Academy, Yekaterinburg, 620041, Russia
^c Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^d Racah Institute of Physics, Hebrew University, 91904 Jerusalem, Israel

Abstract: Ultrasoft X-ray emission spectroscopy and infrared spectroscopy are used to study the Si/SiO$_2$ composite structure produced by deposition from the Si and SiO$_2$ sources onto the Si substrate. Separation of the sources by a rather long distance (96 mm) made it possible to vary the composition of the layer along the direction parallel to the sample surface in a wide range from almost pure SiO$_2$ to Si. On the basis of the X-ray emission Si $L_{2, 3}$ spectra, amorphous silicon $a$-Si and silicon oxide SiO$_2$ were identified in the layers. The infrared spectra show that there are Si nanocrystals in the layers. Variations in the content of Si/SiO$_2$ along the direction parallel to the wafer surface are established. The data obtained by the above-mentioned techniques are correlated with the results of calculations of the layer composition and with the data of profilometric measurements of the layer thicknesses.

Received: 30.07.2009
Accepted: 10.09.2009

 English version: Semiconductors, 2010, 44:4, 531–536

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