Yu. N. Drozdov, A. V. Novikov, M. V. Shaleev, D. V. Yurasov, “Study of the transition of the epitaxial Ge film from layer-to-layer to three-dimensional growth in heterostructures with strained SiGe sublayers”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 4,Pages <nobr>538

This article is cited in 2 papers

Manufacturing, processing, testing of materials and structures

Study of the transition of the epitaxial Ge film from layer-to-layer to three-dimensional growth in heterostructures with strained SiGe sublayers

Yu. N. Drozdov, A. V. Novikov, M. V. Shaleev, D. V. Yurasov

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The results of the study of features of the Ge film transition from two- to three-dimensional growth in different SiGe/Si(001) heterostructures with buried stressed layers are presented. It is shown that deposition of a stressed planar SiGe layer results in a significant decrease in the critical thickness of two-dimensional Ge growth. It was detected that the effect of SiGe layers on Ge film growth is very significant not only in the case of growth directly on the strained SiGe layer, but also if this layer is capped by an unstrained Si layer to thicknesses of $\sim$3.5 nm. It is shown that the model in which the effect of buried strained SiGe layers is taken into account by introducing the phenomenological parameter “decay length of the effective elastic energy” allows description of experimental result data with good accuracy.

Received: 15.07.2009
Accepted: 20.08.2009