This article is cited in 4 papers

Semiconductor physics

Physical model of MOS structure aging

M. A. Bulusheva, V. D. Popov, G. A. Protopopov, A. V. Skorodumova

Moscow Engineering Physics Institute (State University)

Abstract: A physical model of MOS structure aging is presented. The energy parameter of a strained MOS structure, i.e., the energy level of strained bonds, was found using the results of accelerated testing.

Received: 31.08.2009
Accepted: 09.09.2009

 English version: Semiconductors, 2010, 44:4, 508–513

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