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Fizika i Tekhnika Poluprovodnikov, 2010 Volume 44, Issue 4, Pages 507–512 (Mi phts8798)

This article is cited in 36 papers

Low-dimensional systems

Exciton binding energy in semiconductor quantum dots

S. I. Pokutnii

G. V. Kurdyumov Institute for Metal Physics, National Academy of Sciences of Ukraine

Abstract: In the adiabatic approximation in the context of the modified effective mass approach, in which the reduced exciton effective mass $\mu=\mu(a)$ is a function of the radius a of the semiconductor quantum dot, an expression for the exciton binding energy $E_{\mathrm{ex}}(a)$ in the quantum dot is derived. It is found that, in the CdSe and CdS quantum dots with the radii a comparable to the Bohr exciton radii $a_{\mathrm{ex}}$, the exciton binding energy $E_{\mathrm{ex}}(a)$ is substantially (respectively, 7.4 and 4.5 times) higher than the exciton binding energy in the CdSe and CdS single crystals.

Received: 10.06.2009
Accepted: 10.09.2009


 English version:
Semiconductors, 2010, 44:4, 488–493

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