I. V. Antonova, V. A. Skuratov, J. Jedrzejewski, I. Balberg, “Ordered arrays of Si nanocrystals in SiO<nobr>$_2$</nobr>: Structural, optical, and electronic properties”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 4,Pages <nobr>501

This article is cited in 5 papers

Low-dimensional systems

Ordered arrays of Si nanocrystals in SiO$_2$: Structural, optical, and electronic properties

I. V. Antonova^a, V. A. Skuratov^b, J. Jedrzejewski^c, I. Balberg^c

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Joint Institute for Nuclear Research, Dubna, Moscow region
^c Racah Institute of Physics, Hebrew University, Jerusalem, Israel

Abstract: It is found that irradiation of SiO$_2$ layers containing Si nanocrystals with high-energy heavy ions induces profound structural modifications–specifically, the formation of vertically ordered arrays of nanocrystals along the ion tracks. This effect results in substantial changes in the electrical properties (the conductivity and capacitance–voltage characteristics) and optical (photoluminescence) properties of the layers containing nanocrystals.

Received: 03.08.2009
Accepted: 07.09.2009