Abstract:
The heterostructure in which a quantum well is formed in the depletion region of the Schottky barrier is considered. The forward current-voltage characteristic of this structure is calculated and analyzed. It is shown that an N-shaped sharply nonlinear current-voltage characteristic is observed in a wide range of typical values of parameters of the structure under consideration. The characteristic has a clearly pronounced region with a negative differential resistance and a high peak-to-valley ratio.