This article is cited in 5 papers

Semiconductor structures, interfaces and surfaces

Current flow mechanism in ohmic contact to $n$–4H-SiC

T. V. Blank, Yu. A. Goldberg, E. A. Posse, F. Yu. Soldatenkov

Ioffe Institute, St. Petersburg

Abstract: Current flow in an In–$n$–4H-SiC ohmic contact ($n\approx$ 3 $\times$ 10$^{17}$ cm$^{-3}$) has been studied by analyzing the temperature dependence of the per-unit-area contact resistance. It was found that the thermionic emission across an $\sim$0.1-eV barrier is the main current flow mechanism and the effective Richardson constant is $\sim$2 $\times$ 10$^{-2}$ А cm$^{-2}$ K$^{-1}$.

Received: 18.08.2009
Accepted: 07.09.2009

 English version: Semiconductors, 2010, 44:4, 463–466

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