A. A. Andronov, Yu. N. Nozdrin, A. V. Okomel'kov, V. S. Varavin, N. N. Mikhailov, G. Yu. Sidorov, “Stimulated radiation at a wavelength of 2.5 $\mu$m at room temperature from optically excited Cd$_x$ Hg$_{1-x}$Te-based structures”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 4,Pages 476

This article is cited in 1 paper

Semiconductor structures, interfaces and surfaces

Stimulated radiation at a wavelength of 2.5 $\mu$m at room temperature from optically excited Cd$_x$ Hg$_{1-x}$Te-based structures

A. A. Andronov^a, Yu. N. Nozdrin^a, A. V. Okomel'kov^a, V. S. Varavin^b, N. N. Mikhailov^b, G. Yu. Sidorov^b

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: The main requirements for optimization of the MCT-based (Cd$_x$ Hg$_{1-x}$Te-based) structures for an increase in the wavelength of the stimulated radiation from them under optical pumping are discussed. The emergence of stimulated radiation in MCT range of 2–2.5 $\mu$m at room temperature for optimized MCT structures grown on GaAs substrates using the method of molecular beam epitaxy is shown experimentally. The obtained experimental data are the first results of observation of stimulated radiation from the MCT structures at these wavelengths at room temperature. The gain factor in the active medium measured for this case is very large and attains values of 50 cm$^{-1}$, which allows one to hope that a further advance to a longer wavelengths is possible.

Received: 04.08.2009
Accepted: 04.09.2009