A. E. Belyaev, N. S. Boltovets, R. V. Konakova, V. V. Milenin, Yu. N. Sveshnikov, V. N. Sheremet, “Radiation damage of contact structures with diffusion barriers exposed to irradiation with $^{60}$Co $\gamma$-ray photons”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 4,Pages 467

This article is cited in 2 papers

Semiconductor structures, interfaces and surfaces

Radiation damage of contact structures with diffusion barriers exposed to irradiation with $^{60}$Co $\gamma$-ray photons

A. E. Belyaev^a, N. S. Boltovets^b, R. V. Konakova^a, V. V. Milenin^a, Yu. N. Sveshnikov^c, V. N. Sheremet^a

^a Institute of Semiconductor Physics NAS, Kiev
^b JSC Elma-Malachit, Moscow, Zelenograd
^c Orion State Research Institute, Kyiv

Abstract: The effect of ionizing radiation of $^{60}$Co $\gamma$-ray photons in the dose range 10$^4$–2 $\cdot$ 10$^9$ rad on metal-semiconductor Au–ZrB$_x$–AlGaN/GaN and Au–TiB$_x$–Al–Ti–$n$-GaN contacts and Au–ZrB$_x$–$n$-GaN Schottky diodes is examined. The contacts with the TiB$_x$ and ZrB$_x$ diffusion barriers do not degrade under the effect of ionizing radiation if the dose does not exceed $\lesssim$ 10$^8$ rad. The Au–ZrB$_x$–$_n$-GaN Schottky diodes remain stable in the dose range 10$^4$–10$^6$ rad. As the radiation dose is increased to $\gtrsim$ 10$^8$ rad, the damage to the contact metallization increases and is accompanied by formation of through pores, which is conducive to accumulation of oxygen at the Au–ZrB$_x$ (TiB$_x$) interfaces and to an increase in mass transport of atoms in contact-forming layers. In this case, irradiation-caused degradation of the Schottky diodes is observed. Possible mechanisms of radiation damage of contact structures with diffusion barriers are analyzed.

Received: 30.07.2009
Accepted: 20.08.2009