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Electronic and optical properties of semiconductors
Features of self-activated luminescence spectra of CdS:O in the context of band anticrossing theory
N. K. Morozova,
N. D. Danilevich National Research University "Moscow Power Engineering Institute"
Abstract:
The interpretation of the nature of self-activated luminescence spectra of CdS:O is given on the basis of the band anticrossing theory, making it possible to take into account the effect of isoelectron oxygen impurity on the modification of the band structure. The bands of self-activated luminescence (SA and SAL) of CdS:O similar to those of ZnS-ZnSe:O are revealed. In the presence of dissolved oxygen O
$_{\mathrm{S}}$, the presence of two additional
$H$ and
$L$ components is revealed in the composition of SA bands, which are owed to the transitions from E
$_+$- and E
$_-$ subbands of the CdS:O split conduction band to the recombination level E
$_{\mathrm{SA}}$. Their spectral dependence on the dissolved-oxygen concentration [O
$_{\mathrm{S}}$] is determined. It is shown that the CdS green edge emission is similar to that of SAL; however, in contrast to ZnS–ZnSe:O, there is no
$H$ component in the fundamental-absorption region of the crystal. The analysis of the composition of the SA and SAL centers in the CdS crystals shows their equivalence to ZnS(ZnSe). From the experimental data, the position of the oxygen localized level
$E_0$, a decrease in the band gap
$E_g$ with [O
$_{\mathrm{S}}$], and the band model of CdS:O are found. This study supplements similar investigations carried out previously for ZnS–ZnSe:O.
Received: 11.09.2009
Accepted: 12.09.2009
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