A. A. Shklyaev, A. V. Latyshev, M. Ichikawa, “1.5–1.6 <nobr>$\mu$</nobr>m photoluminescence of silicon layers with a high density of lattice defects”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 4,Pages <nobr>452

This article is cited in 15 papers

Electronic and optical properties of semiconductors

1.5–1.6 $\mu$m photoluminescence of silicon layers with a high density of lattice defects

A. A. Shklyaev^ab, A. V. Latyshev^ab, M. Ichikawa^c

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University
^c Quantum-Phase Electronics Center, Department of Applied Physics, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bynkyo-ku, Tokyo 113-8656, Japan

Abstract: This study is concerned with photoluminescence of nanostructured silicon layers that emit radiation in the wavelength range 1.5–1.6 $\mu$m due to optical transitions to deep levels of recombination centers produced by crystal lattice defects. It is shown that the dependence of the photoluminescence intensity on the excitation power density is adequately described by the model of deep levels of one type. A shift of the photoluminescence peak to shorter wavelengths with increasing excitation power density is observed. The shift is indicative of changes in the occupancy of deep levels in the conditions of transfer of charge carriers between recombination centers.

Received: 25.08.2009
Accepted: 07.09.2009