This article is cited in 11 papers

Electronic and optical properties of semiconductors

The effect of Fe, Cu, and Si impurities on the formation of emission spectra in bulk ZnO crystals

M. M. Mezdrogina^a, È. Yu. Danilovskii^a, R. V. Kuz'min^a, N. K. Poletaev^a, I. N. Trapeznikova^a, M. V. Chukichev^b, G. A. Bordovskii^c, A. V. Marchenko^c, M. V. Eremenko<sup>d

a</sup> Ioffe Institute, St. Petersburg
^b Lomonosov Moscow State University
^c Herzen State Pedagogical University of Russia, St. Petersburg
^d Peter the Great St. Petersburg Polytechnic University

Abstract: On the basis of the results of complex investigations (photoluminescence, x-ray fluorescence, and infrared spectroscopy), the features of emission-spectra formation are shown under the change in the type (Fe, Cu, and Si) and concentration of background impurities appearing during both growth and treatment of bulk crystals by grinding and polishing. Special attention is given to the concentration and types of bonds with hydrogen-the basic impurity preventing the formation of crystals with the $p$-type conductivity.

Received: 30.07.2009
Accepted: 20.08.2009

 English version: Semiconductors, 2010, 44:4, 426–431

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