This article is cited in 1 paper

Electronic and optical properties of semiconductors

Influence of the defect structure of $\gamma$-La$_{2(1-x)}$Nd$_{2x}$S$_3$ crystals on their spectroscopic properties

A. A. Mamedov

Institute of Physics Azerbaijan Academy of Sciences

Abstract: The photoluminescence and Raman scattering of undoped $\gamma$-Ln$_2$S$_3$ single crystals (Ln is a rare earth ion) and the decay kinetics of the $^4F_{3/2}$ level of Nd ions in these crystals have been investigated. The distortion of the decay curve of the Nd $^4F_{3/2}$ level upon excitation by light with $\lambda$ = 0.53 $\mu$m is explained.

Received: 13.04.2009
Accepted: 03.06.2009

 English version: Semiconductors, 2010, 44:4, 421–425

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