Atomic structure and non-electronic properties of semiconductors

Numerical simulation of hydrogenation of GaAs at the cooling stage

V. A. Kagadei^a, E. V. Nefedtsev<sup>b

a</sup> Scientific-Research Institute of Semiconductor Devices, Tomsk
^b Institute of High Current Electronics, Siberian Branch of the Russian Academy of Sciences, Tomsk

Abstract: Evolution of concentration profiles of all types of hydrogen particles, charge carriers, active doping impurity, and distribution of the electric field in the near-surface layer of hydrogenated $p$-GaAs during cooling the sample after finishing the stage of introduction of hydrogen is simulated. It is shown that the form of final concentration profiles of hydrogen-containing particles and distribution of the intrinsic electric field in the hydrogenated $p$-GaAs layer depend on the temperature-time mode of cooling the sample. The degree of the effect of the cooling rate on the final state of hydrogenated layer increases as the doping level of semiconductor is decreased. Systematic features of formation of the final state of the hydrogen-crystal system depending on the cooling rate of the sample are presented and discussed.

Received: 05.02.2009
Accepted: 09.09.2009

 English version: Semiconductors, 2010, 44:4, 413–420

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