Yu. G. Sadof'ev, N. Samal, B. A. Andreev, V. I. Gavrilenko, S. V. Morozov, A. G. Spivakov, A. N. Yablonskii, “GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 <nobr>$\mu$</nobr>m”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 3,Pages <nobr>422

This article is cited in 29 papers

Manufacturing, processing, testing of materials and structures

GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 $\mu$m

Yu. G. Sadof'ev^a, N. Samal^a, B. A. Andreev^b, V. I. Gavrilenko^b, S. V. Morozov^b, A. G. Spivakov^b, A. N. Yablonskii^b

^a Trion Technology, Tempe, AZ, USA
^b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: Optimum conditions for the growth of theGaAs$_{1-x}$Sb$_x$/GaAs heterostructures by the method of molecular-bean epitaxy are determined; it is shown that effective long-wavelength photoluminescence at $T$ = 300 K can be obtained at wavelengths as long as $\lambda$ = 1.3 $\mu$m by increasing the antimony incorporation. As the excitation power is increased, the appearance of a short-wavelength line (in addition to a shift of a photoluminescence maximum to shorter wavelengths characteristic of the type II heterojunctions) related to direct optical transitions in the real space takes place; this relation is confirmed by the results of studying the photoluminescence spectra with subpicosecond and nanosecond time resolution in the case of pulsed excitation.

Received: 15.07.2009
Accepted: 24.08.2009