This article is cited in 10 papers

Manufacturing, processing, testing of materials and structures

Secondary cluster ions Ge$_2^-$ and Ge$_3^-$ for improving depth resolution of SIMS depth profiling of GeSi/Si heterostructures

M. N. Drozdov, Yu. N. Drozdov, D. N. Lobanov, A. V. Novikov, D. V. Yurasov

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: New possibilities of improving depth resolution of SIMS depth profiling of GeSi/Si heterostructures using a TOF.SIMS-5 spectrometer are discussed. Contributions of ion sputtering artifacts and instrumental effects to depth resolution were analyzed in detail using a Talysurf CCI-2000 optical profilometer to control the shape and roughnesses of the sputtering crater bottom. It was found that the use of Cs$^+$ ions for sputtering makes it possible to minimize roughness development during depth profiling of GeSi/Si structures to depths of 1–1.5 $\mu$m. It was shown that the use of secondary cluster ions Ge$_2^-$ and Ge$_3^-$ instead of Ge$_1^-$ and Ge$^+$ allows narrowing the transition regions in measured profiles.

 English version: Semiconductors, 2010, 44:3, 401–404

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