This article is cited in 9 papers

Manufacturing, processing, testing of materials and structures

Sublimation molecular beam epitaxy of silicon-based structures

V. P. Kuznetsov^a, Z. F. Krasil'nik<sup>b

a</sup> Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
^b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The capabilities of various methods for fabricating silicon-based single-crystal structures are analyzed. The features and advantages of sublimation molecular-beam epitaxy are discussed.

Received: 15.07.2009
Accepted: 24.08.2009

 English version: Semiconductors, 2010, 44:3, 396–400

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