V. P. Kuznetsov, M. V. Kuznetsov, Z. F. Krasil'nik, “Si:Er/Si diode structures for observing room-temperature electroluminescence at a wavelength of 1.54 <nobr>$\mu$</nobr>m”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 3,Pages <nobr>402

This article is cited in 2 papers

Semiconductor physics

Si:Er/Si diode structures for observing room-temperature electroluminescence at a wavelength of 1.54 $\mu$m

V. P. Kuznetsov^ab, M. V. Kuznetsov^a, Z. F. Krasil'nik^b

^a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
^b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: Si:Er/Si diode structures for observing room-temperature electroluminescence at a wavelength of 1.5 $\mu$m are analyzed. The structures were grown by sublimation molecular-beam epitaxy. Some ways to increase the electroluminescence intensity are discussed.

Received: 15.07.2009
Accepted: 24.08.2009