This article is cited in 3 papers

Semiconductor physics

Influence of radiation defects on electrical losses in silicon diodes irradiated with electrons

N. A. Poklonskii^a, N. I. Gorbachuk^a, S. V. Shpakovski^b, S. B. Lastovsky^c, A. Wieck<sup>d

a</sup> Belarusian State University, Minsk
^b JSC “INTEGRAL”
^c Scientific-Practical Materials Research Centre of NAS of Belarus
^d Ruhr-Universität Bochum, D-44780 Bochum, Deutschland

Abstract: Silicon diodes with a $p^+$–$n$ junction irradiated with 3.5-MeV electrons (the fluence ranged from 10$^{15}$ to 4 $\times$ 10$^{16}$ cm$^{-2}$) have been studied. It is established that the dependence of the tangent of the angle of electrical losses $\operatorname{tg}\delta$ on the frequency $f$ of alternating current in the range $f$ = 10$^2$–10$^6$ Hz is a nonmonotonic function with two extrema: a minimum and a maximum. Transformation of the dependences $\operatorname{tg}\delta(f)$ as the electron fluence and annealing temperature are increased is caused by a variation in the resistance of $n$-Si (the base region of the diodes) as a result of accumulation (as the fluence is increased) or disappearance and reconfiguration (in the course of annealing) of radiation defects. The role of time lag of the defect recharging in the formation of $\operatorname{tg}\delta(f)$ is insignificant.

Received: 30.07.2009
Accepted: 20.08.2009

 English version: Semiconductors, 2010, 44:3, 380–384

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