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Fizika i Tekhnika Poluprovodnikov, 2010 Volume 44, Issue 3, Pages 383–389 (Mi phts8777)

This article is cited in 20 papers

Semiconductor physics

Effect of gold on the properties of nitrogen dioxide sensors based on thin WO$_3$ films

O. V. Anisimova, V. I. Gamanb, N. K. Maksimovaa, Yu. P. Najdenb, V. A. Novikovb, E. Yu. Sevastyanova, F. V. Rudovb, E. V. Chernikova

a Siberian Physical-Technical Institute of the Tomsk State University
b Tomsk State University

Abstract: The microstructure and properties of gold-doped WO$_3$ (WO$_3$:Au) thin films before and after deposition of dispersed Au layers have been studied. It is shown that the $\gamma$-WO$_{2.72}$ phase arises in WO$_3$:Au layers, which leads to a significant increase in the film conductivity. Deposition of a dispersed gold layer results in an increase in the sensor response to NO$_2$ by several times. The concentration dependences and the dynamics of sensor responses to nitrogen dioxide are described by the analytical expressions derived under the assumption that WO$_3$ films contain grains connected by conducting bridges. An analysis of the experimental data using these expressions made it possible to determine the activation energies of NO$_2$ adsorption and desorption and the adsorption heat.

Received: 28.05.2009
Accepted: 08.07.2009


 English version:
Semiconductors, 2010, 44:3, 366–372

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