This article is cited in 1 paper

Amorphous, glassy, porous, organic, microcrystalline semiconductors, semiconductor composites

Polydisalicylidene azomethyne/Si(GaAs) heterojunctions: Development and properties

Yu. A. Nikolaev^a, V. Yu. Rud'^b, Yu. V. Rud'^a, E. I. Terukov^a, N. M. Geller^c, A. G. Ivanov^c, V. V. Shamanin<sup>c

a</sup> Ioffe Institute, St. Petersburg
^b Peter the Great St. Petersburg Polytechnic University
^c Institute of Macromolecular Compounds, Russian Academy of Sciences, St. Petersburg

Abstract: An athermal nonvacuum technology was suggested and implemented, and nonclassically polyconjugated polydisalicylidene azomethyne/Si(GaAs) heterojunctions were fabricated for the first time. It was found that the highest photosensitivity of these heterojunctions is attained upon exposure to light in the spectral range of 1–3.5 eV of the side of thin polymer films. It was concluded that new heterojunctions can be used as broadband photoconverters of optical radiation.

Received: 09.07.2009
Accepted: 18.08.2009

 English version: Semiconductors, 2010, 44:3, 354–358

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