This article is cited in 12 papers

Low-dimensional systems

Observation of localized centers with anomalous behavior in light-emitting heterostructures with multiple InGaN/GaN quantum wells

O. V. Kucherova^a, V. I. Zubkov^a, A. V. Solomonov^a, D. V. Davydov<sup>bc

a</sup> Saint Petersburg Electrotechnical University "LETI"
^b Ioffe Institute, St. Petersburg
^c Svetlana Optoelectronics ZAO, St. Petersburg

Abstract: For the first time, using a complex of admittance spectroscopy, light-emitting heterostructures with InGaN/GaN multiple quantum wells were studied in a wide temperature range of 6–300 K. Three peaks are found in the conductance spectra; these peaks correspond to emission of charge carriers from the quantum wells and point defects distributed in the semiconductor bulk. Two low-temperature peaks possess an anomalous behavior, specifically, the peak with a low value of apparent activation energy (17 meV) is shifted to higher temperatures compared with the higher-energy peak (30 meV). The latter is attributed to a bulk defect having anomalously large capture cross section $\sigma_n$ = 1.5 $\times$ 10$^{-11}$ cm$^2$.

Received: 09.07.2009
Accepted: 08.08.2009

 English version: Semiconductors, 2010, 44:3, 335–340

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