This article is cited in 22 papers

Semiconductor structures, interfaces and surfaces

Photosensitivity of $n$-CdS/$p$-CdTe heterojunctions obtained by chemical surface deposition of CdS

G. A. Ilchuk^a, V. V. Kusnezh^a, V. Yu. Rud'^b, Yu. V. Rud'^c, P. Y. Shapowal^a, R. Yu. Petrus<sup>a

a</sup> Lviv Polytechnic National University
^b Peter the Great St. Petersburg Polytechnic University
^c Ioffe Institute, St. Petersburg

Abstract: A new technology of chemical surface deposition is developed, and thin CdS films (35–100 nm) on the $p$-CdTe substrates are obtained. Electrical and photoelectric properties of $n$-CdS/$p$-CdTe heterojunctions are studied, and it is shown that the developed method provides high efficiency of photoconversion in the range restricted by the CdTe and CdS band gaps. It is shown that the method of chemical surface deposition of CdS can be used in the design of thin-film $n$-CdS/$p$-CdTe.

Received: 01.06.2009
Accepted: 08.07.2009

 English version: Semiconductors, 2010, 44:3, 318–320

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