This article is cited in 9 papers

Semiconductor structures, interfaces and surfaces

Study of the current-voltage characteristic of the $n$-CdS/$p$-CdTe heterostructure depending on temperature

Sh. N. Usmonov, Sh. A. Mirsagatov, A. Yu. Leiderman

Physical-Technical Institute, Uzbekistan Academy of Sciences

Abstract: Current-voltage characteristics of the $n$-CdS/$p$-CdTe heterostructure are studied at different temperatures. It is established that the forward portion of the current-voltage characteristic of these structures at low voltages (as high as 0.5 V) is described by the exponential dependence, while at high voltages (as high as 2.6 V), there is a portion of sublinear growth of the current with voltage. Experimental results are interpreted based on the theory of the effect of injection depletion. It is shown that the product of mobility of majority carriers by the concentration of deep centers increases as the temperature is increased.

Received: 18.05.2009
Accepted: 30.05.2009

 English version: Semiconductors, 2010, 44:3, 313–317

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