A. I. Dmitriev, R. B. Morgunov, O. L. Kazakova, “Effect of annealing on the microwave magnetoresistance of thin Ge$_{0.96}$Mn$_{0.04}$ films”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 3,Pages 320

This article is cited in 2 papers

Electronic and optical properties of semiconductors

Effect of annealing on the microwave magnetoresistance of thin Ge$_{0.96}$Mn$_{0.04}$ films

A. I. Dmitriev^a, R. B. Morgunov^a, O. L. Kazakova^b

^a Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia
^b National Physical Laboratory, Teddington, UK

Abstract: It is established that annealing of ion-implanted thin Ge$_{0.96}$Mn$_{0.04}$ films with a thickness of 120 nm induces an increase in the microwave resistivity and a change in the mechanism of dephasing of charge carriers. The effect of annealing on the microwave transport properties of the thin films is due to the diffusion-controlled aggregation of dispersed Mn$^{2+}$ impurity ions to form Ge$_3$Mn$_5$ clusters.

Received: 22.06.2009
Accepted: 30.07.2009