This article is cited in 11 papers

Manufacturing, processing, testing of materials and structures

High-power InAs/InAsSbP heterostructure leds for methane spectroscopy ($\lambda\approx$ 3.3 $\mu$m)

A. P. Astakhova^a, A. S. Golovin^a, N. D. Il'inskaya^a, K. V. Kalinina^a, S. S. Kizhaev^a, O. Yu. Serebrennikova^a, N. D. Stoyanov^a, Z. J. Horvath^b, Yu. P. Yakovlev<sup>a

a</sup> Ioffe Institute, St. Petersburg
^b Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, Budapest 114, H-1525 Hungary

Abstract: Two designs of light-emitting diodes (LEDs) based on InAsSbP/InAs/InAsSbP double hetero-structures grown by metal-organic vapor phase epitaxy on $p$- and $n$-InAs substrates have been studied. The current-voltage and electroluminescence characteristics of the LEDs are analyzed. It is shown that the LED design with a light-emitting crystal (chip) mounted with the epitaxial layer down on the LED case and emission extracted through the n-InAs substrate provides better heat removal. As a result, the spectral characteristics remain stable at increased injection currents and the quantum efficiency of radiative recombination is higher. The internal quantum efficiency of light-em itting structures with an emission wavelength $\lambda$ = 3.3–3.4 $\mu$m is as high as 22.3%. The optical emission power of the LEDs is 140 $\mu$W at a current of 1 A in the quasi-continuous mode and reaches a value of 5.5 mW at a current of 9 A in the pulsed mode.

Received: 01.07.2009
Accepted: 16.07.2009

 English version: Semiconductors, 2010, 44:2, 263–268

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