This article is cited in 8 papers

Manufacturing, processing, testing of materials and structures

Microstructure and strain of ZnO molecular-beam epitaxial layers on sapphire

V. V. Ratnikov^a, R. N. Kyutt^a, S. V. Ivanov^a, M. P. Scheglov^a, A. Baar<sup>b

a</sup> Ioffe Institute, St. Petersburg
^b Technical University Braunschweig, Pockelsstr. 14, 38106, Braunschweig, Germany

Abstract: Strains and crystalline perfection of ZnO epitaxial layers on sapphire grown by molecular-beam epitaxy were studied using high-resolution X-ray diffrac tometry. The strain state of samples was determined by curvature measurements. The structural quality of layers was analyzed by diffraction measurements in the Bragg and Laue geometry using $\theta$- and ($\theta$-2$\theta$) scanning modes. It was found that the grown layers (Zn/O $>$ 1) are subject to biaxial tensile stresses, while stresses are absent for Zn/O $<$ 1. The density and depth of different dislocations were calculated from the diffraction peak broadening.

Received: 01.06.2009
Accepted: 08.06.2009

 English version: Semiconductors, 2010, 44:2, 251–254

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