This article is cited in 9 papers

Manufacturing, processing, testing of materials and structures

Epitaxial growth and properties of Mg$_x$Zn$_{1-x}$O films produced by pulsed laser deposition

A. A. Lotin^a, O. A. Novodvorskii^a, E. V. Khaidukov^a, V. V. Rocheva^a, O. D. Khramova^a, V. Ya. Panchenko^a, C. Wenzel^b, N. Trumpaicka^b, K. D. Shcherbachev<sup>c

a</sup> Institute on Laser and Information Technologies, Russian Academy of Scienses, Shatura, Moskovskaya obl.
^b Institute of Semiconductor and Microsystems Technology, University of Technology, Dresden, D-01063, Germany
^c National University of Science and Technology «MISIS», Moscow

Abstract: The Mg$_x$Zn$_{1-x}$O thin films with a Mg content corresponding to $x$ = 0–0.45 are grown by pulsed laser deposition on ablation of ceramic targets. The conditions for epitaxial growth of the films on the single-crystal Al$_2$O$_3$ (00.1) substrates are established. The record limit of solubility of Mg in hexagonal ZnO, $x$ = 35 is attained. In this case, the lattice mismatch for the parameter a of the ZnO and Mg$_{0.35}$Zn$_{0.65}$O films does not exceed 1%, whereas the band gaps of the films differ by 0.78 eV. The surface roughness of the films corresponds to 0.8–1.5 nm in the range of $x$ = 0–0.27.

Received: 28.05.2009
Accepted: 08.06.2009

 English version: Semiconductors, 2010, 44:2, 246–250

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