This article is cited in 19 papers

Semiconductor physics

A study of epitaxially stacked tunnel-junction semiconductor lasers grown by MOCVD

D. A. Vinokurov^a, V. P. Konyaev^b, M. A. Ladugin^b, A. V. Lyutetskiy^a, A. A. Marmalyuk^b, A. A. Padalitsa^b, A. N. Petrunov^a, N. A. Pikhtin^a, V. A. Simakov^b, S. O. Slipchenko^a, A. V. Sukharev^b, N. V. Fetisova^a, V. V. Shamakhov^a, I. S. Tarasov<sup>a

a</sup> Ioffe Institute, St. Petersburg
^b Polyus Research and Development Institute named after M. F. Stel'makh, Moscow

Abstract: Design parameters of epitaxially stacked tunnel-junction asymmetric separate-confinement laser heterostructures are chosen. Technological modes for fabrication of heterostructures of this kind by metal-organic chemical vapor deposition in the system of AlGaAs/GaAs/InGaAs solid solutions are found. It is demonstrated that high-efficiency GaAs:Si/GaAs:C tunnel structures and asymmetric AlGaAs/GaAs/InGaAs laser heterostructures with low internal optical loss can be fabricated in a single technological process. Conditions are chosen in which a deep mesa can be formed for fabrication of mesa-stripe diode lasers based on epitaxially stacked tunnel-junction laser heterostructures. Mesa-stripe diode lasers with a 150 $\times$ 12-$\mu$m aperture have been manufactured on the basis of these structures. These samples have a threshold current density $J_{\mathrm{th}}$ of 96 A cm$^{-2}$, internal optical loss $\alpha_i$ of 0.82 cm$^{-1}$, and differential resistance $R$ = 280 m $\Omega$. Samples containing three laser structures have a slope efficiency of 3 W A$^{-1}$ and a maximum peak output power of 250 W in the pulsed operation mode (100 ns, 1 kHz).

Received: 30.07.2009
Accepted: 20.08.2009

 English version: Semiconductors, 2010, 44:2, 238–242

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