L. B. Karlina, A. S. Vlasov, M. M. Kulagina, E. P. Rakova, N. Kh. Timoshina, V. M. Andreev, “Highly efficient photovoltaic cells based on In$_{0.53}$Ga$_{0.47}$As alloys with isovalent doping”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 2,Pages 240

This article is cited in 5 papers

Semiconductor physics

Highly efficient photovoltaic cells based on In$_{0.53}$Ga$_{0.47}$As alloys with isovalent doping

L. B. Karlina, A. S. Vlasov, M. M. Kulagina, E. P. Rakova, N. Kh. Timoshina, V. M. Andreev

Ioffe Institute, St. Petersburg

Abstract: The effect of isovalent doping with P on the surface and bulk properties of the In$_{0.53}$Ga$_{0.47}$As alloy (below, InGaAs) was evaluated from variations in the photoluminescence and transmission spectra. It is established that isovalent doping decreases the nonradiative recombination rate in the bulk and on the surface of doped layers. The use of additional isovalent doping provided an improvement of parameters of the narrow-gap InGaAs-based solar cell used for the conversion of the concentrated solar radiation. The maximum efficiency of photovoltaic conversion in a spectral range of 900–1840 nm was 7.4–7.35% at a ratio of concentration of the solar radiation of 500–1000 for the AM1.5D Low AOD spectrum.

Received: 22.06.2009
Accepted: 29.06.2009