Calculation and analysis of distributions of current density and temperature over the area of the the InGaN/GaN structure of high-power light-emitting diodes
Abstract:
A thermal model of a high-power InGaN/GaN light-emitting diode is considered; the model takes into account the exponential temperature dependence of the current density and density of the power dissipated by the active region of the heterostructure. The iteration method has been used to solve a set of equations that includes a time-independent heat-conduction equation with adiabatic conditions of the second kind on the lateral boundaries of the heterostructure and thermogeneration equations under the condition of constant average current density in the active region of the structure. The dependences of maximal and average overheating over the active region of the structure on operation current and ambient temperature for two models of heat sinks, semi-infinite and limited, are determined.
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