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Fizika i Tekhnika Poluprovodnikov, 2010 Volume 44, Issue 2, Pages 194–199 (Mi phts8745)

This article is cited in 24 papers

Low-dimensional systems

The substructure and luminescence of low-temperature AlGaAs/GaAs(100) heterostructures

P. V. Seredina, A. V. Glotova, È. P. Domashevskayaa, I. N. Arsent'evb, D. A. Vinokurovb, I. S. Tarasovb, I. A. Zhurbinac

a Voronezh State University
b Ioffe Institute, St. Petersburg
c Lomonosov Moscow State University

Abstract: The substructure and luminescence of low-temperature epitaxial AlGaAs alloys are studied by Raman spectroscopy and photoluminescence spectroscopy. It is shown that the experimental data obtained in the study are consistent with the results of the previous structural and optical study. The assumption that, at high concentrations of carbon acceptors, the acceptor atoms concentrate at lattice defects of the AlGaAs crystal alloys to form carbon nanocrystals is confirmed.

Received: 08.06.2009
Accepted: 15.06.2009


 English version:
Semiconductors, 2010, 44:2, 184–188

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