This article is cited in 5 papers

Electronic and optical properties of semiconductors

Resonant Raman scattering and dispersion of polar optical and acoustic phonons in hexagonal InN

V. Yu. Davydov^a, A. A. Klochikhin^ab, A. N. Smirnov^a, I. Yu. Strashkova^a, A. S. Krylov^c, Hai Lu^d, William J. Schaff^d, H.-M. Lee^e, Y.-L. Hong^e, S. Gwo<sup>e

a</sup> Ioffe Institute, St. Petersburg
^b The Petersburg Nuclear Physics Institute, The National Research Center "Kurchatov Institute"
^c L. V. Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk
^d Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA
^e Department of Physics, National Tsing-Hua University, Taiwan, Republic of China

Abstract: It is shown that a study of the dependence of impurity-related resonant first-order Raman scattering on the frequency of excitation light makes it possible to observe the dispersion of polar optical and acoustic branches of vibrational spectrum in hexagonal InN within a wide range of wave vectors. It is established that the wave vectors of excited phonons are uniquely related to the energy of excitation photon. Frequencies of longitudinal optical phonons $E_1$(LO) and $A_1$(LO) in hexagonal InN were measured in the range of excitation-photon energies from 2.81 to 1.17 eV and the frequencies of longitudinal acoustic phonons were measured in the range 2.81–1.83 eV of excitation-photon energies. The obtained dependences made it possible to extrapolate the dispersion of phonons $A_1$(LO) и $E_1$(LO) to as far as the point $\Gamma$ in the Brillouin zone and estimate the center-band energies of these phonons (these energies have not been uniquely determined so far).

Received: 18.08.2009
Accepted: 25.08.2025

 English version: Semiconductors, 2010, 44:2, 161–170

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