Abstract:
The aim of this study was to gain insight into the effect of irradiation with 25-MeV protons on the Hall mobility of electrons in $n$-Si crystals. Irradiated crystals with an initial electron concentration 6 $\times$ 10$^{13}$ cm$^{-3}$ were studied using the Hall method in the range of temperatures 77–300 K. The studies showed that, in crystals irradiated with the proton dose $\Phi$ = 8.1 $\times$ 10$^{12}$ cm$^{-2}$, the effective mobility of conduction electrons $\mu_{\mathrm{eff}}$ increases drastically. This effect is direct evidence that inclusions with relatively high conductivity and with nonrectifying junction at interfaces with semiconductor matrix are predominantly formed in $n$-Si crystals under these conditions. Agglomerations of interstitial atoms or their associations can represent such inclusions.
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