This article is cited in 8 papers

Electronic and optical properties of semiconductors

Preparation and optical properties of ZnSe:Ni crystals

Yu. F. Vaksman^a, Yu. A. Nitsuk^a, V. V. Yatsun^a, A. S. Nasibov^b, P. V. Shapkin<sup>b

a</sup> I. I. Mechnikov Odessa National University
^b P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow

Abstract: The ZnSe:Ni single crystals doped by diffusion are investigated. The diffusion is carried out from metallic nickel in helium and argon atmosphere. The optical-density spectra are investigated in the wave-length range of 0.4–3 $\mu$m. From the value of the absorption-edge shift, the nickel concentration in crystals under investigation is determined. The optical-density and luminescence spectra of ZnSe:Ni are identified. The nickel-impurity diffusion profile is determined by measuring the relative optical density of crystals in the visible spectral region. The diffusivities of nickel in ZnSe crystals are calculated at temperatures of 1073–1273 K.

Received: 13.04.2009
Accepted: 21.04.2009

 English version: Semiconductors, 2010, 44:2, 141–144

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