This article is cited in 4 papers

Atomic structure and non-electronic properties of semiconductors

Electroplasticity of undoped and doped silicon

A. R. Velikhanov

Daghestan Institute of Physics after Amirkhanov

Abstract: A new technology of formation of dislocation dissipative structures in undoped and doped semi-conductor crystals by the combined deformation, which makes it possible to control their elastoplastic properties, is suggested. New macroplastic properties of these crystals are found. From the obtained compression diagrams, various strain parameters are determined and surface microstructures of the obtained deformed samples are investigated. Possible physical explanations are proposed for the observed phenomenon.

Received: 02.06.2009
Accepted: 11.07.2009

 English version: Semiconductors, 2010, 44:2, 137–140

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