V. V. Lundin, E. E. Zavarin, M. A. Sinicin, A. V. Sakharov, S. O. Usov, A. E. Nikolaev, D. V. Davydov, N. A. Cherkashin, A. F. Tsatsul'nikov, “Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 1,Pages <nobr>126

This article is cited in 5 papers

Manufacturing, processing, testing of materials and structures

Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes

V. V. Lundin^ab, E. E. Zavarin^ab, M. A. Sinicin^ab, A. V. Sakharov^ab, S. O. Usov^ab, A. E. Nikolaev^ab, D. V. Davydov^ab, N. A. Cherkashin^c, A. F. Tsatsul'nikov^ab

^a Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
^b Ioffe Institute, St. Petersburg
^c Center for Material Elaboration & Structural Studies (CEMES) of the National Center for Scientific Research (CNRS) 31055 Toulouse, France

Abstract: Effect of pressure in the reactor in the case of growth of active regions in the InGaN/GaN light-emitting diodes by the method of vapor-phase epitaxy from metalorganic compounds on their electroluminescent and structural properties has been studied. It is shown that, as pressure is increased, the InGaN layers become transformed from being continuous in the lateral direction to the layers of separate InGaN islands. This transformation affects both the emission efficiency and the dependence of efficiency on current.

Received: 08.06.2009
Accepted: 15.06.2009