A. V. Panin, A. R. Shugurov, I. V. Ivonin, E. V. Shesterikov, “The role of stress distribution at the film/barrier interface in formation of copper silicides”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 1,Pages <nobr>118

This article is cited in 9 papers

Manufacturing, processing, testing of materials and structures

The role of stress distribution at the film/barrier interface in formation of copper silicides

A. V. Panin^a, A. R. Shugurov^a, I. V. Ivonin^b, E. V. Shesterikov^c

^a Institute of Strength Physics and Materials Science, Siberian Branch of the Russian Academy of Sciences, Tomsk
^b Tomsk State University
^c "Mikran" Research and Production Company, Tomsk

Abstract: Silicide formation in thin Cu films subjected to thermal annealing has been investigated by atomic force microscopy, scanning electron microscopy, X-ray diffraction, and energy-dispersive X-ray spectroscopy. It is shown that the periodic stress distribution at the film/barrier interface under elevated temperatures can govern the character of copper silicide formation. The effect of barrier layer material and substrate orientation on the distribution density and shape of Cu$_3$Si crystallites has been studied.

Received: 27.04.2010
Accepted: 04.05.2010