This article is cited in 11 papers

Manufacturing, processing, testing of materials and structures

The initial stage of growth of crystalline nanowhiskers

N. V. Sibirev^a, M. V. Nazarenko^a, G. È. Cirlin^abc, Yu. B. Samsonenko^abc, V. G. Dubrovskii<sup>ab

a</sup> St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^b Ioffe Institute, St. Petersburg
^c Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg

Abstract: The initial stage of formation of semiconductor nanowhiskers by the vapor-liquid-solid mechanism is studied theoretically and experimentally. It is shown that small-sized droplets either are overgrown or emerge together with the surface of the two-dimensional epitaxial layer. The geometric shape of the nanowhiskers at the initial stage of growth is calculated. Experimental data on the formation of GaAs nanowhiskers by molecular beam epitaxy on the GaAs(111)As substrates activated with Au are reported.

Received: 29.04.2009
Accepted: 30.04.2009

 English version: Semiconductors, 2010, 44:1, 112–115

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