Semiconductor physics

Efficient infrared-terahertz pulse conversion in waveguide semiconductor structures

V. A. Kukushkin

Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod

Abstract: It is shown that the use of a waveguide semiconductor structure provides a means for substantially increasing the degree of conversion of a high-power infrared pulse to a terahertz pulse by optical rectification of the infrared pulse in a medium with a quadratic nonlinearity of the permittivity. Using the example of the C/GaAs/C waveguide heterostructure, the optimal parameters of both the structure as such and the infrared pulse are determined and the duration and shape of the output terahertz pulse are calculated.

Received: 06.05.2009
Accepted: 12.05.2009

 English version: Semiconductors, 2010, 44:1, 106–111

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