A. F. Tsatsul'nikov, V. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, N. A. Cherkashin, B. Ya. Ber, D. Yu. Kazantsev, M. N. Mizerov, Hee Seok Park, M. Hytch, F. Hue, “Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 1,Pages <nobr>96

This article is cited in 9 papers

Semiconductor physics

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

A. F. Tsatsul'nikov^ab, V. V. Lundin^ab, A. V. Sakharov^ab, E. E. Zavarin^ab, S. O. Usov^ab, A. E. Nikolaev^ab, N. A. Cherkashin^ac, B. Ya. Ber^a, D. Yu. Kazantsev^a, M. N. Mizerov^b, Hee Seok Park^d, M. Hytch^c, F. Hue^c

^a Ioffe Institute, St. Petersburg
^b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
^c Center for Material Elaboration & Structural Studies of the National Center for Scientific Research, 31055 Toulouse, France
^d Samsung Electro-Mechanics Co. Ltd., Suwon, Gyunggi-Do, Korea

Abstract: The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency.

Received: 08.06.2010
Accepted: 15.06.2010