This article is cited in 11 papers

Amorphous, glassy, porous, organic, microcrystalline semiconductors, semiconductor composites

The nature of emission of porous silicon produced by chemical etching

N. E. Korsunskaya^a, T. R. Stara^a, L. Yu. Khomenkova^a, E. V. Svezhentsova^a, N. N. Melnichenko^b, F. F. Sizov<sup>a

a</sup> Institute of Semiconductor Physics NAS, Kiev
^b National Taras Shevchenko University of Kyiv

Abstract: The structural and luminescence characteristics of porous silicon produced by chemical etching are studied. From analysis of the behavior of luminescence spectra with temperature, it is shown that the luminescence band of porous silicon samples produced by chemical etching presents a superposition of two bands. It is concluded that one of the bands is due to excitonic recombination in amorphous silicon nano-clusters smaller than 3 nm in dimensions and the other band corresponds to recombination of charge carriers via defects in silicon oxide. At room temperature, the latter band prevails.

Received: 12.03.2009
Accepted: 09.04.2009

 English version: Semiconductors, 2010, 44:1, 79–83

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