This article is cited in 2 papers

Low-dimensional systems

Formation of three-dimensional ZnSe-based semiconductor nanostructures

S. V. Alyshev^a, A. O. Zabezhailov^a, R. A. Mironov^a, V. I. Kozlovsky^b, E. M. Dianov<sup>a

a</sup> Fiber Optics Research Center of the Russian Academy of Sciences, Moscow
^b P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow

Abstract: Nanostructures consisting of a 10-nm-thick sacrificial layer of ZnMgSSe and a 20-nm-thick stressed bilayer of ZnSSe/ZnSe were grown by molecular-beam epitaxy on GaAs substrates. Upon removal of the sacrificial layer by selective etching, multiwall ZnSSe/ZnSe microtubes were formed.

Received: 20.05.2009
Accepted: 29.05.2009

 English version: Semiconductors, 2010, 44:1, 72–75

Bibliographic databases:

•